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1A66B NT5DS64M 167BZI T6630CP RU6051K MBR3030 50020 CGD1042H
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  electro-optical characteristics (ta=25 o c unless otherwise noted) i sc short circuit current h = 100 fc, 2850 k 28 32 25 30 m a i d dark current h = 0, v r = 5 v* 3 5 5 10 na r sh shunt resistance h = 0, v r = 10 mv 18 40 30 60 m w tc r sh r sh temp. coefficient h = 0, v r = 10 mv -8 -8 % / o c c j junction capacitance h = 0, v r = 5 v** 25 350 pf l range spectral application range spot scan 350 1100 350 1100 nm l p spectral response - peak spot scan 940 940 nm v br breakdown voltage i = 10 m a2550515v n ep noise equivalent power v r = 0 v @ peak 3 x 10 -13 typ 4 x 2 -14 typ w/ hz tr response time rl = 1 k w v r = 5 v** 12 400 ns absolute maximum rating (ta=25 o c unless otherwise noted) min max min max v br reverse voltage 75 25 v t stg storage temperature -40 +125 -40 +125 o c t o operating temperature range -40 +100 -40 +100 o c t s soldering temperature +224 +224 o c i l light current 500 500 ma symbol characteristic test conditions units information in this technical data sheet is believed to be correct and reliable. however, no responsibility is assumed for pos sible inaccuracies or omission. specifications are subject to change without notice. [form no. 100-pdb-c603-v603 rev a] min typ max min typ max silicon photodiode, blue enhanced solderable chips photoconductive type pdb-c603 photovoltaic type pdb-v603 package dimensions inch (mm) features blue enhanced photovoltaic type photoconductive type high quantum efficiency symbol parameter units description: low cost blue enhanced planar diffused silicon solderable photodiode. the pdb-v603 cell is designed for low noise, photovoltaic applications. the pdb-c603 cell is designed for low capacitance, high speed, photoconductive operation. they are available bare, pvc or buss wire leads. *vr = 100 mv on photovoltaic type **vr = 0 v on photovoltaic type pdb-v603 pdb-c603 active area = 2.55 mm 2 pdb-c603-1 pdb-v603-1 pdb-c603-2 pdb-v603-2 PDB-C603-3 pdb-v603-3 pdb-c603 pdb-v603 applications optical encoder position sensor industrial controls instrumentation 1.250 [6.35] 0.097 [2.46] 0.057 [1.45] 0.016 [0.41] 0.014 [0.36] anode, red wire cathode, black wire 0.097 [2.46] 0.057 [1.45] 0.014 [0.36] 0.016 [0.41] 1.00 [25.4] anode, buss wire 0.097 [2.46] 0.057 [1.45] 0.014 [0.36] 0.016 [0.41] 0.015 [0.38] bare chip 30 gage p.v.c. wire 34 gage buss wire photonic detectors inc. 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 190 300 400 500 600 700 800 900 1000 1100 1200 spectral response wavelength (nm) responsivity (a/w) qe = 100%


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